The cell incorporates subcells made of aluminum gallium indium phosphide (AlGaInP), aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs). Junhua Long ...

Particular interests are wide band gap materials (AlGaInP and (Al)InGaN) for visible and uv light emitters and quantum dots for high efficiency lasers and novel light emitters. I was the first person ...