Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based ...

allowing the plasma to be used at its full potential while avoiding damage. The FlexAL2D system offers a variety of advantages for creating 2D materials and delivers ALD of 2D transition metal ...

(Image: A*STAR Institute of Materials Research and Engineering) Wet etching can be classified into two main types based on the etching mechanism and the resulting profile: It's worth noting that wet ...

Using the charged particles found in plasma is the easiest way to create the very small but deep, circular holes needed for ...

Through via hole fabrication process by deep reactive-ion etching (DRIE): (a) Sample cleaning; (b) Deposition of mask material; (c) Transfer of desired pattern; (d) Desired pattern achieved; (e) ...