The unique properties of porous silicon, combined with advanced epitaxial growth techniques, such as molecular beam epitaxy (MBE), allow for the creation of high-quality semiconductor structures.

Cubic silicon carbide (3C ... developed to better understand the growth processes and defect formation, which will be crucial for advancing this field. Epitaxy: A method used to grow a crystalline ...

What is Template-Assisted Growth? Template-assisted growth is a versatile nanofabrication ... Scanning electron microscope images of single crystal structures fabricated using template-assisted ...