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7 天
江西兆驰半导体申请新专利:提升AlGaInP发光二极管出光效率
2025年1月29日,江西兆驰半导体有限公司正式申请了名为“AlGaInP发光二极管外延片及其制备方法、LED”的专利,旨在提高发光效率,推动光电技术的发展。这项专利是对发光二极管技术的重大升级,展示了实际应用与理论研究的紧密结合,为半导体行业带来了新 ...
C&EN
23 天
Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces
Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany ...
University of Sheffield
22 天
Professor Jo Shien Ng
I received my BEng degree and PhD degrees in electronic engineering from the University of Sheffield, in 1999 and 2003, respectively. I held a postdoctoral position responsible for III-V material and ...
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