The point contact diode consists of a semiconductor wafer, a metallic tip (whisker) (W, Pt, Au) applied to one side of the wafer and a second flat electrode applied to the other side of the wafer.

Abstract: We fabricated a gated-anode diode employing an AlGaN/GaN high electron mobility transistor (HEMT) to serve as a rectification device in a 5.8-GHz band microwave wireless power transmission ...

The chances are that many of you will have made an FM “bug” style transmitter, a simple one-transistor oscillator usually driven by a small electret microphone. It’s also relatively ...