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Plasma technique doubles etch rate for 3D NAND flash memoryTo store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.
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One recent development involves keeping the wafer –– the sheet of semiconductor ... uses hydrogen fluoride gas to create the plasma. “Cryo etch with the hydrogen fluoride plasma showed ...
Abstract: In this review article, various aspects of plasma etching for very large scale integrated (VLSI) circuit technology are presented. The motivation for using plasma etching and the advantages ...
Using the charged particles found in plasma is the easiest way to create the very small but deep, circular holes needed for microelectronics, he said. However, the process, known as reactive ion ...
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