Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

2019年8月1日 · Dynamic random access memory, or DRAM, is a specific type of random access memory that allows for higher densities at a lower cost. The memory modules found in laptops and desktops use DRAM. Other types of memory like SRAM, MRAM, and Flash may be discussed in a future article.

•DRAM chips are described as xN, where N refers to the number of output pins; one rank may be composed of eight x8 DRAM chips (the data bus is 64 bits) •The memory controller schedules memory accesses to maximize row buffer hit rates and bank/rank parallelism

2024年9月16日 · DRAM stands for Dynamic Random Access Memory. Random Access Memory because, to achieve high performance and low latency, random locations from the whole memory are picked for storage and reading. Each memory cell is connected to a grid of rows and columns or bit lines and word lines.

DRAM Main Memory • Main memory is stored in DRAM cells that have much higher storage density • DRAM cells lose their state over time – must be refreshed periodically, hence the name Dynamic • DRAM access suffers from long access time and high energy overhead

2016年10月9日 · A bank is spread across the DRAM chips where each chip provides a word (x4, x8, x16) from the column (where the column constitutes 64 bits / storage cells (128 storage cells with complementary / dummy storage cells for differential sense amplifier)).

• A DRAM bank is a 2D array of cells: rows x columns • A “DRAM row”is also called a “DRAM page” • “Sense amplifiers”also called “row buffer”

since DRAM’s inception, there have been a stream of changes to the design, from FPM to EDO to Burst EDO to SDRAM. the changes are largely structural modifications -- nimor -- that target THROUGHPUT. FPM aallows you to keep th esense amps actuve for multiple CAS commands ...

DRAM DRAM DRAM DRAM DRAM Rank x8 DRAM Bank All banks within the rank share all address and control pins x8 means each DRAM outputs 8 bits, need 8 chips for DDRx (64-bit) All banks are independent, but can only talk to one bank at a time Why 9 chips per rank? 64 bits data, 8 bits ECC

Dynamic random access memory (DRAM) is a type of random access memory that stores each bit of data in a separate capacitor within an integrated circuit. Since real capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically.